15 kingbright ? kp-2012p3 2.0mm x 1.2mm x1.1mm (0805) kp-3216p3 3.2mm x 1.6mm x1.1mm (1206) kp-3015p3 3.0mm x 1.5mm x1.1mm (1106) kpa-3010p3 3.0mm x 1.0mm x2.0mm (1104) parameter max. ratings collector-to-emitter breakdown voltage 30v emitter-to-collector breakdown voltage 5v power dissipation at (or below) free air temperature 100mw operating temperature range storage temperature range -40 c~ +85 c -40 c~ +85 c symbol parameter min. typ. max unit test condition collector-to-emitter breakdown voltage 30 - - v emitter-to-collector breakdown voltage 5 - - v collector-to-emitter saturation voltage - - 0.8 v collector dark current - - 100 na rise time (10% to 90%) - 3 - us fall time (90% to 10%) - 3 - us on state collector current 0.1 0.3 - ma phototransistors 2.0mm x 1.2mm x 1.1mm (0805) kp-2012p3c wa ter clear lens kp-2012p3bt blue transparent lens 3.2mm x 1.6mm x 1.1mm (1206) kp-3216p3c wa ter clear lens kp-3216p3bt blue transparent lens 3.0mm x 1.5mm x 1.1 mm(1106) kp-3015p3c wa ter clear lens KP-3015P3BT blue transparent lens 3.0mm x 1.0mm x 2.0mm (1104) kpa-3010p3c wa ter clear lens kpa-3010p3bt blue transparent lens smd phototransistors electrical and radiant characteristics t a =25 c absolute maximum rating t a =25 c kp-2012p3c kp-3216p3c kp-3015p3c kpa-3010p3c v br ceo v br eco v ce (sat) i ceo t r t f i (on) i c =100ua, i b =0 i e =100ua, i b =0 i c =0.1ma, h=2.5mw/cm2 v ce =10v, h=0mw/cm 2 v ce =5v, i c =1ma, r l =100 w v ce =5v, e e =1mw/cm2 l =940nm units : mm(inch) tolerance : 0.1(0.004) units : mm(inch) tolerance : 0.2(0.0079) units : mm(inch) tolerance : 0.2(0.0079) units : mm(inch) tolerance : 0.15(0.006) 25 c
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